High-resolution cross-sectional analysis of the interface between SiC and SiO2 in a MOSFET device via atomic resolution STEM

Publikation: Beitrag in einer Fachzeitschrift › Artikel › Begutachtung

Abstract

Originalsprache	englisch
Aufsatznummer	113366
Seitenumfang	6
Fachzeitschrift	Microelectronics Reliability
Jahrgang	100-101
DOIs	https://doi.org/10.1016/j.microrel.2019.06.058 https://doi.org/10.1016/j.microrel.2019.06.058
Publikationsstatus	Veröffentlicht - 2019

@article{c038907e70124006a5d4fad9b76f66b0,

title = "High-resolution cross-sectional analysis of the interface between SiC and SiO2 in a MOSFET device via atomic resolution STEM",

author = "Evelin Fisslthaler and Georg Haberfehlner and Christian Gspan and Gernot Gruber and Werner Grogger",

year = "2019",

doi = "https://doi.org/10.1016/j.microrel.2019.06.058",

language = "English",

volume = "100-101",

journal = "Microelectronics Reliability",

issn = "1872-941X",

publisher = "Elsevier Ltd.",

}

TY - JOUR

T1 - High-resolution cross-sectional analysis of the interface between SiC and SiO2 in a MOSFET device via atomic resolution STEM

AU - Fisslthaler, Evelin

AU - Haberfehlner, Georg

AU - Gspan, Christian

AU - Gruber, Gernot

AU - Grogger, Werner

PY - 2019

Y1 - 2019

U2 - https://doi.org/10.1016/j.microrel.2019.06.058

DO - https://doi.org/10.1016/j.microrel.2019.06.058

M3 - Article

SN - 1872-941X

VL - 100-101

JO - Microelectronics Reliability

JF - Microelectronics Reliability

M1 - 113366

ER -