Evaluation of thermal and growth stresses in heteroepitaxial AlN thin films formed on (0001) sapphire by pulsed laser ablation

J. Keckes, S. Six, W. Tesch, Roland Resel, B. Rauschenbach

Publikation: Beitrag in einer FachzeitschriftArtikelForschungBegutachtung

Originalspracheenglisch
Seiten (von - bis)80-86
FachzeitschriftJournal of Crystal Growth
Jahrgang240
Ausgabenummer1-2
PublikationsstatusVeröffentlicht - 2002

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Evaluation of thermal and growth stresses in heteroepitaxial AlN thin films formed on (0001) sapphire by pulsed laser ablation. / Keckes, J.; Six, S.; Tesch, W.; Resel, Roland; Rauschenbach, B.

in: Journal of Crystal Growth, Jahrgang 240, Nr. 1-2, 2002, S. 80-86.

Publikation: Beitrag in einer FachzeitschriftArtikelForschungBegutachtung

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title = "Evaluation of thermal and growth stresses in heteroepitaxial AlN thin films formed on (0001) sapphire by pulsed laser ablation",
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TY - JOUR

T1 - Evaluation of thermal and growth stresses in heteroepitaxial AlN thin films formed on (0001) sapphire by pulsed laser ablation

AU - Keckes, J.

AU - Six, S.

AU - Tesch, W.

AU - Resel, Roland

AU - Rauschenbach, B.

PY - 2002

Y1 - 2002

M3 - Article

VL - 240

SP - 80

EP - 86

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-2

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