Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs

Andrea Minetto, Nicola Modolo, Luca Sayadi, Christian Koller, Clemens Ostermaier, Matteo Meneghini, Enrico Zanoni, Gerhard Prechtl, Sebastien Sicre, Bernd Deutschmann, Oliver Haberlen

Publikation: Beitrag in einer FachzeitschriftArtikel

Abstract

In this work, an analysis of the impact of drain field plate (FP) length on the semi-on degradation of AlGaN/GaN high-electron-mobility transistors (HEMTs) is performed. A wafer-level characterization, by means of pulsed stress tests, reveals a faster and more severe decrease of the drain current in the linear region for the samples with longer drain FP. 2-D technology computer-aided design (TCAD) hydrodynamic simulations show that a time and field-dependent hot electrons (HEs) trapping takes place at the passivation/barrier interface. The higher drain current decrease in the longer FP samples can be ascribed to an enhanced HE trapping at the drain FP edge due to a different electric field distribution.

Originalspracheenglisch
Seiten (von - bis)5003 - 5008
Seitenumfang6
FachzeitschriftIEEE Transactions on Electron Devices
Jahrgang68
Ausgabenummer10
DOIs
PublikationsstatusVeröffentlicht - Okt 2021

ASJC Scopus subject areas

  • !!Electronic, Optical and Magnetic Materials
  • !!Electrical and Electronic Engineering

Fields of Expertise

  • Information, Communication & Computing

Fingerprint

Untersuchen Sie die Forschungsthemen von „Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs“. Zusammen bilden sie einen einzigartigen Fingerprint.

Dieses zitieren