TY - JOUR
T1 - Deep X-ray lithography for direct patterning of PECVD films
AU - Costacurta, Stefano
AU - Malfatti, Luca
AU - Patelli, Alessandro
AU - Falcaro, Paolo
AU - Amenitsch, Heinz
AU - Marmiroli, Benedetta
AU - Grenci, Gianluca
AU - Piccinini, Massimo
AU - Innocenzi, Plinio
PY - 2010/6/22
Y1 - 2010/6/22
N2 - An advanced lithographic technique which is based on direct writing of thin films by hard X-rays has been developed. Silica hybrid organic-inorganic films have been deposited by radio frequency plasma-enhanced chemical vapour deposition and have been patterned using deep X-ray lithography with synchrotron light. The exposure to high energy photons removed the organic groups in the films and induced densification of the silica network. The films, after lithographic writing, can be easily chemically etched to obtain well-defined patterns of high quality. By tuning the exposure dose it is possible modulating the structure and the properties of the final material. The overall lithography process can be achieved in two steps, writing by X-rays and chemical etching, therefore employing the hybrid film directly as resist without employing any other intermediate step. The films and the patterned structures have been characterized by ellipsometric spectroscopy, scanning electron microscopy, atomic force microscopy, contact angle measurements, Fourier transform infrared spectroscopy, infrared imaging and Rutherford backscattering. (Figure Presented)
AB - An advanced lithographic technique which is based on direct writing of thin films by hard X-rays has been developed. Silica hybrid organic-inorganic films have been deposited by radio frequency plasma-enhanced chemical vapour deposition and have been patterned using deep X-ray lithography with synchrotron light. The exposure to high energy photons removed the organic groups in the films and induced densification of the silica network. The films, after lithographic writing, can be easily chemically etched to obtain well-defined patterns of high quality. By tuning the exposure dose it is possible modulating the structure and the properties of the final material. The overall lithography process can be achieved in two steps, writing by X-rays and chemical etching, therefore employing the hybrid film directly as resist without employing any other intermediate step. The films and the patterned structures have been characterized by ellipsometric spectroscopy, scanning electron microscopy, atomic force microscopy, contact angle measurements, Fourier transform infrared spectroscopy, infrared imaging and Rutherford backscattering. (Figure Presented)
KW - Deep x-ray lithography
KW - Infrared absorption spectroscopy (IR-AS)
KW - Lithography
KW - Plasma-enhanced chemical vapour deposition (PECVD)
KW - Sol-gel
KW - Synchrotron light
KW - Thin films
KW - X-ray
UR - http://www.scopus.com/inward/record.url?scp=77954943265&partnerID=8YFLogxK
U2 - 10.1002/ppap.200900147
DO - 10.1002/ppap.200900147
M3 - Article
AN - SCOPUS:77954943265
SN - 1612-8850
VL - 7
SP - 459
EP - 465
JO - Plasma Processes and Polymers
JF - Plasma Processes and Polymers
IS - 6
ER -