Critical Evaluation of Organic Thin-Film Transistor Models

Markus Krammer, James W. Borchert, Andreas Petritz, Esther Karner-Petritz, Gerburg Schider, Barbara Stadlober, Hagen Klauk, Karin Zojer

Publikation: Beitrag in einer FachzeitschriftArtikelForschung

Abstract

Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical characteristics. However, the trust in such extracted parameters is limited, because their values depend on the extraction technique and on the underlying transistor model. We propose a technique to establish whether a chosen model is adequate to represent the transistor operation. This two-step technique analyzes the electrical measurements of a series of TFTs with different channel lengths. The first step extracts the parameters for each individual transistor by fitting the full output and transfer characteristics to the transistor model. The second step checks whether the channel-length dependence of the extracted parameters is consistent with the model. We demonstrate the merit of the technique for distinct sets of organic TFTs that differ in the semiconductor, the contacts, and the geometry. Independent of the transistor set, our technique consistently reveals that state-of-the-art transistor models fail to reproduce the correct channel-length dependence. Our technique suggests that contemporary transistor models require improvements in terms of charge-carrier-density dependence of the mobility and/or the consideration of uncompensated charges in the transistor channel.
Originalspracheenglisch
FachzeitschriftarXiv.org e-Print archive
PublikationsstatusVeröffentlicht - 20 Dez 2018

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transistors
evaluation
thin films
charge carriers
carrier mobility
contact resistance
electrical measurement
output
geometry

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    Fields of Expertise

    • Advanced Materials Science

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    Krammer, M., Borchert, J. W., Petritz, A., Karner-Petritz, E., Schider, G., Stadlober, B., ... Zojer, K. (2018). Critical Evaluation of Organic Thin-Film Transistor Models. arXiv.org e-Print archive.

    Critical Evaluation of Organic Thin-Film Transistor Models. / Krammer, Markus; Borchert, James W.; Petritz, Andreas; Karner-Petritz, Esther; Schider, Gerburg; Stadlober, Barbara; Klauk, Hagen; Zojer, Karin.

    in: arXiv.org e-Print archive, 20.12.2018.

    Publikation: Beitrag in einer FachzeitschriftArtikelForschung

    Krammer, M, Borchert, JW, Petritz, A, Karner-Petritz, E, Schider, G, Stadlober, B, Klauk, H & Zojer, K 2018, 'Critical Evaluation of Organic Thin-Film Transistor Models' arXiv.org e-Print archive.
    Krammer M, Borchert JW, Petritz A, Karner-Petritz E, Schider G, Stadlober B et al. Critical Evaluation of Organic Thin-Film Transistor Models. arXiv.org e-Print archive. 2018 Dez 20.
    Krammer, Markus ; Borchert, James W. ; Petritz, Andreas ; Karner-Petritz, Esther ; Schider, Gerburg ; Stadlober, Barbara ; Klauk, Hagen ; Zojer, Karin. / Critical Evaluation of Organic Thin-Film Transistor Models. in: arXiv.org e-Print archive. 2018.
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    title = "Critical Evaluation of Organic Thin-Film Transistor Models",
    abstract = "Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical characteristics. However, the trust in such extracted parameters is limited, because their values depend on the extraction technique and on the underlying transistor model. We propose a technique to establish whether a chosen model is adequate to represent the transistor operation. This two-step technique analyzes the electrical measurements of a series of TFTs with different channel lengths. The first step extracts the parameters for each individual transistor by fitting the full output and transfer characteristics to the transistor model. The second step checks whether the channel-length dependence of the extracted parameters is consistent with the model. We demonstrate the merit of the technique for distinct sets of organic TFTs that differ in the semiconductor, the contacts, and the geometry. Independent of the transistor set, our technique consistently reveals that state-of-the-art transistor models fail to reproduce the correct channel-length dependence. Our technique suggests that contemporary transistor models require improvements in terms of charge-carrier-density dependence of the mobility and/or the consideration of uncompensated charges in the transistor channel.",
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    AU - Schider, Gerburg

    AU - Stadlober, Barbara

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    N2 - Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical characteristics. However, the trust in such extracted parameters is limited, because their values depend on the extraction technique and on the underlying transistor model. We propose a technique to establish whether a chosen model is adequate to represent the transistor operation. This two-step technique analyzes the electrical measurements of a series of TFTs with different channel lengths. The first step extracts the parameters for each individual transistor by fitting the full output and transfer characteristics to the transistor model. The second step checks whether the channel-length dependence of the extracted parameters is consistent with the model. We demonstrate the merit of the technique for distinct sets of organic TFTs that differ in the semiconductor, the contacts, and the geometry. Independent of the transistor set, our technique consistently reveals that state-of-the-art transistor models fail to reproduce the correct channel-length dependence. Our technique suggests that contemporary transistor models require improvements in terms of charge-carrier-density dependence of the mobility and/or the consideration of uncompensated charges in the transistor channel.

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