Chemical vapor deposition for solvent-free polymerization at surfaces

Jose Luis Yagüe, Anna Maria Coclite, Christy Petruczok, Karen K. Gleason*

*Korrespondierende/r Autor/-in für diese Arbeit

    Publikation: Beitrag in einer FachzeitschriftArtikelBegutachtung

    Abstract

    Chemical vapor deposition (CVD) methods are a powerful technology for engineering surfaces. When CVD is combined with the richness of organic chemistry, the resulting polymeric coatings, deposited without solvents, represent an enabling technology in many different fields of application. This article focuses on initiated chemical vapor deposition (iCVD), a new technique that utilizes benign reaction conditions to yield conformal and functional polymer thin films. The latest achievements in coating surfaces and 3D substrates with functional materials, and the use of the technique for biotechnology and selective permeation applications are reviewed, and future directions for iCVD technology are discussed. Initiated chemical vapor deposition (iCVD) polymerization is a very elegant technique for designing new patterns and tuning the chemistry available on any kind of surface. These polymers attract considerable attention in many different fields of application. This trends article highlights the latest achievements in the fabrication of new surfaces and functional materials via iCVD and presents significant insights in its scale-up process.

    Originalspracheenglisch
    Seiten (von - bis)302-312
    Seitenumfang11
    FachzeitschriftMacromolecular Chemistry and Physics
    Jahrgang214
    Ausgabenummer3
    DOIs
    PublikationsstatusVeröffentlicht - 12 Feb. 2013

    ASJC Scopus subject areas

    • Physik der kondensierten Materie
    • Physikalische und Theoretische Chemie
    • Polymere und Kunststoffe
    • Organische Chemie
    • Werkstoffchemie

    Fingerprint

    Untersuchen Sie die Forschungsthemen von „Chemical vapor deposition for solvent-free polymerization at surfaces“. Zusammen bilden sie einen einzigartigen Fingerprint.

    Dieses zitieren