Abstract
We have used a superconducting single-electron transistor as a dc electrometer that is strongly coupled to the metal island of another transistor. With this setup, it is possible to directly measure the charge distribution on this island. The strong capacitive coupling was achieved by a multilayer fabrication technique that allowed us to make the coupling capacitance bigger than the junction capacitances. Simulations of this system were done using the orthodox theory of single-electron tunneling and showed excellent agreement with the measurements.
| Originalsprache | englisch |
|---|---|
| Aufsatznummer | 245116 |
| Seiten (von - bis) | 2451161-2451165 |
| Seitenumfang | 5 |
| Fachzeitschrift | Physical Review / B |
| Jahrgang | 64 |
| Ausgabenummer | 24 |
| Publikationsstatus | Veröffentlicht - 15 Dez 2001 |
| Extern publiziert | Ja |
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ASJC Scopus subject areas
- !!Condensed Matter Physics
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Charge spectrometry with a strongly coupled superconducting single-electron transistor. / Heij, C. P.; Hadley, P.; Mooij, J. E.
in: Physical Review / B, Jahrgang 64, Nr. 24, 245116, 15.12.2001, S. 2451161-2451165.Publikation: Beitrag in einer Fachzeitschrift › Artikel › Forschung › Begutachtung
}
TY - JOUR
T1 - Charge spectrometry with a strongly coupled superconducting single-electron transistor
AU - Heij, C. P.
AU - Hadley, P.
AU - Mooij, J. E.
PY - 2001/12/15
Y1 - 2001/12/15
N2 - We have used a superconducting single-electron transistor as a dc electrometer that is strongly coupled to the metal island of another transistor. With this setup, it is possible to directly measure the charge distribution on this island. The strong capacitive coupling was achieved by a multilayer fabrication technique that allowed us to make the coupling capacitance bigger than the junction capacitances. Simulations of this system were done using the orthodox theory of single-electron tunneling and showed excellent agreement with the measurements.
AB - We have used a superconducting single-electron transistor as a dc electrometer that is strongly coupled to the metal island of another transistor. With this setup, it is possible to directly measure the charge distribution on this island. The strong capacitive coupling was achieved by a multilayer fabrication technique that allowed us to make the coupling capacitance bigger than the junction capacitances. Simulations of this system were done using the orthodox theory of single-electron tunneling and showed excellent agreement with the measurements.
UR - http://www.scopus.com/inward/record.url?scp=0035894444&partnerID=8YFLogxK
M3 - Article
VL - 64
SP - 2451161
EP - 2451165
JO - Physical Review / B
JF - Physical Review / B
SN - 1098-0121
IS - 24
M1 - 245116
ER -