TY - JOUR
T1 - Characterization of human metal ESD reference discharge event and correlation of generator parameters to failure levels - Part II
T2 - Correlation of generator parameters to failure levels
AU - Wang, Kai
AU - Pommerenke, David
AU - Chundru, Ramachandran
AU - Van Doren, Tom
AU - Pio Centola, Federico
AU - Huang, Jiu Sheng
PY - 2004/11/1
Y1 - 2004/11/1
N2 - Most electrostatic discharge (ESD) generators are built in accordance with the IEC 61000-4-2 specifications. It is shown, that the voltage induced in a small loop correlates with the failure level observed in an ESD failure test on the systems comprised of fast CMOS devices, while rise time and derivative of the discharge current did not correlate well. The electric parameters of typical ESD generators and ESD generators that have been modified to reflect the current and field parameters of the human metal reference event are compared and the effect on the failure level of fast CMOS electronics is investigated. The consequences of aligning an ESD standard with the suggestions of the first paper, of this two-paper series, are discussed with respect to reproducibility and test severity.
AB - Most electrostatic discharge (ESD) generators are built in accordance with the IEC 61000-4-2 specifications. It is shown, that the voltage induced in a small loop correlates with the failure level observed in an ESD failure test on the systems comprised of fast CMOS devices, while rise time and derivative of the discharge current did not correlate well. The electric parameters of typical ESD generators and ESD generators that have been modified to reflect the current and field parameters of the human metal reference event are compared and the effect on the failure level of fast CMOS electronics is investigated. The consequences of aligning an ESD standard with the suggestions of the first paper, of this two-paper series, are discussed with respect to reproducibility and test severity.
KW - Electrostatic discharge (ESD) generator
KW - Fast CMOS system
KW - Induced loop voltage
UR - http://www.scopus.com/inward/record.url?scp=10644281333&partnerID=8YFLogxK
U2 - 10.1109/TEMC.2004.837688
DO - 10.1109/TEMC.2004.837688
M3 - Article
AN - SCOPUS:10644281333
SN - 0018-9375
VL - 46
SP - 505
EP - 511
JO - IEEE Transactions on Electromagnetic Compatibility
JF - IEEE Transactions on Electromagnetic Compatibility
IS - 4
ER -