Band Bending Engineering at Organic/Inorganic Interfaces Using Organic Self-Assembled Monolayers

Oliver T. Hofmann, Patrick Rinke

Publikation: Beitrag in einer FachzeitschriftArtikelForschungBegutachtung

Abstract

Adsorbing strong electron donors or acceptors on semiconducting surfaces induces band bending, whose extent and magnitude are strongly dependent on the doping concentration of the semiconductor. This study applies hybrid density-functional theory calculations together with the recently developed charge reservoir electrostatic sheet technique to account for charge transfer from the bulk of the semiconductor to the interface. This study further investigates the impact of surface-functionalization with specifically tailored self-assembled monolayers (SAMs). For the example of three chemically-similar SAMs, that all bond to the ZnO surface via pyridine docking groups, it is shown that the SAMs introduce shallow or deep donor levels that pin the band bending at the position of the SAM's highest occupied molecular orbital. In this way, the magnitude of the induced band bending can be controlled by the type of SAM, to a point where the doping-concentration dependence is completely eliminated.

Originalspracheenglisch
Aufsatznummer1600373
FachzeitschriftAdvanced Electronic Materials
Jahrgang3
Ausgabenummer6
DOIs
PublikationsstatusVeröffentlicht - 1 Jun 2017

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Self assembled monolayers
Doping (additives)
Semiconductor materials
Molecular orbitals
Pyridine
Density functional theory
Charge transfer
Electrostatics
Electrons

Schlagwörter

    ASJC Scopus subject areas

    • !!Electronic, Optical and Magnetic Materials

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    Band Bending Engineering at Organic/Inorganic Interfaces Using Organic Self-Assembled Monolayers. / Hofmann, Oliver T.; Rinke, Patrick.

    in: Advanced Electronic Materials, Jahrgang 3, Nr. 6, 1600373, 01.06.2017.

    Publikation: Beitrag in einer FachzeitschriftArtikelForschungBegutachtung

    @article{2559b44620794578bb64d8f06876c25f,
    title = "Band Bending Engineering at Organic/Inorganic Interfaces Using Organic Self-Assembled Monolayers",
    abstract = "Adsorbing strong electron donors or acceptors on semiconducting surfaces induces band bending, whose extent and magnitude are strongly dependent on the doping concentration of the semiconductor. This study applies hybrid density-functional theory calculations together with the recently developed charge reservoir electrostatic sheet technique to account for charge transfer from the bulk of the semiconductor to the interface. This study further investigates the impact of surface-functionalization with specifically tailored self-assembled monolayers (SAMs). For the example of three chemically-similar SAMs, that all bond to the ZnO surface via pyridine docking groups, it is shown that the SAMs introduce shallow or deep donor levels that pin the band bending at the position of the SAM's highest occupied molecular orbital. In this way, the magnitude of the induced band bending can be controlled by the type of SAM, to a point where the doping-concentration dependence is completely eliminated.",
    keywords = "electrode/molecule contacts, organic/inorganic interfaces, oxide interfaces, surface modification and engineering, theory & simulation",
    author = "Hofmann, {Oliver T.} and Patrick Rinke",
    year = "2017",
    month = "6",
    day = "1",
    doi = "10.1002/aelm.201600373",
    language = "English",
    volume = "3",
    journal = "Advanced Electronic Materials",
    issn = "2199-160X",
    publisher = "Wiley",
    number = "6",

    }

    TY - JOUR

    T1 - Band Bending Engineering at Organic/Inorganic Interfaces Using Organic Self-Assembled Monolayers

    AU - Hofmann, Oliver T.

    AU - Rinke, Patrick

    PY - 2017/6/1

    Y1 - 2017/6/1

    N2 - Adsorbing strong electron donors or acceptors on semiconducting surfaces induces band bending, whose extent and magnitude are strongly dependent on the doping concentration of the semiconductor. This study applies hybrid density-functional theory calculations together with the recently developed charge reservoir electrostatic sheet technique to account for charge transfer from the bulk of the semiconductor to the interface. This study further investigates the impact of surface-functionalization with specifically tailored self-assembled monolayers (SAMs). For the example of three chemically-similar SAMs, that all bond to the ZnO surface via pyridine docking groups, it is shown that the SAMs introduce shallow or deep donor levels that pin the band bending at the position of the SAM's highest occupied molecular orbital. In this way, the magnitude of the induced band bending can be controlled by the type of SAM, to a point where the doping-concentration dependence is completely eliminated.

    AB - Adsorbing strong electron donors or acceptors on semiconducting surfaces induces band bending, whose extent and magnitude are strongly dependent on the doping concentration of the semiconductor. This study applies hybrid density-functional theory calculations together with the recently developed charge reservoir electrostatic sheet technique to account for charge transfer from the bulk of the semiconductor to the interface. This study further investigates the impact of surface-functionalization with specifically tailored self-assembled monolayers (SAMs). For the example of three chemically-similar SAMs, that all bond to the ZnO surface via pyridine docking groups, it is shown that the SAMs introduce shallow or deep donor levels that pin the band bending at the position of the SAM's highest occupied molecular orbital. In this way, the magnitude of the induced band bending can be controlled by the type of SAM, to a point where the doping-concentration dependence is completely eliminated.

    KW - electrode/molecule contacts

    KW - organic/inorganic interfaces

    KW - oxide interfaces

    KW - surface modification and engineering

    KW - theory & simulation

    UR - http://www.scopus.com/inward/record.url?scp=85020660212&partnerID=8YFLogxK

    U2 - 10.1002/aelm.201600373

    DO - 10.1002/aelm.201600373

    M3 - Article

    VL - 3

    JO - Advanced Electronic Materials

    JF - Advanced Electronic Materials

    SN - 2199-160X

    IS - 6

    M1 - 1600373

    ER -