Attosecond spectroscopy of band-gap dynamics excited by the electric field of light

M. Schultze, Krupa Ramasesha, Daniel Neumark, Stephen R. Leone

Publikation: Beitrag in Buch/Bericht/KonferenzbandBeitrag in einem Konferenzband

Abstract

The basis of modern electronics and information processing is the control of the electric properties of semiconductors with microwave fields. Speeding up electronics requires extending this control to optical frequencies. We apply attosecond solid state spectroscopy to investigate and compare light field induced ultrafast carrier dynamics in a prototypical semiconductor (silicon) and dielectric (SiO2). After excitation by a highly intense few-cycle visible laser pulse, a time-delayed extreme ultraviolet attosecond pulse centered around the Silicon L-edge transition maps the conduction band population and thus probes the unfolding electronic dynamics with sub femtosecond resolution. While the induced changes in SiO2 appear only in the presence of the strong light field, the experiment on silicon measures a permanent population transfer into the conduction band triggered by the electric field of light as well as ultrafast renormalization of the band structure.
Originalspracheenglisch
TitelAPS Meeting Abstracts
SeitenY42.003
PublikationsstatusVeröffentlicht - Mär 2014
Extern publiziertJa
VeranstaltungAPS March Meeting - Denver, USA / Vereinigte Staaten
Dauer: 3 Mär 20147 Mär 2014

Konferenz

KonferenzAPS March Meeting
LandUSA / Vereinigte Staaten
OrtDenver
Zeitraum3/03/147/03/14

Fields of Expertise

  • Advanced Materials Science

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