Abstract
Field levels in indirect Electrostatic Discharge (ESD) test setups are not known yet. It has been proposed to ANSI and IEC to use a horizontal simulator position instead of a vertical position in indirect ESD testing. This paper shows the field values on the Horizontal Coupling Plane for different topologies in comparison to human ESD and questions if the goal of the change - a reduction of the simulator influence - will be achieved. Also, investigations dealing with the sensitivity of digital devices to impulsive fields are presented.
Originalsprache | englisch |
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Seiten (von - bis) | 99-106 |
Seitenumfang | 8 |
Fachzeitschrift | Electrical Overstress Electrostatic Discharge Symposium Proceedings |
Publikationsstatus | Veröffentlicht - 1 Dez. 1997 |
Extern publiziert | Ja |
Veranstaltung | 19th Annual Electrical Overstress/Electrostatic Discharge Symposium: EOS/ESD 1997 - Santa Clara, USA / Vereinigte Staaten Dauer: 23 Sept. 1997 → 25 Sept. 1997 |
ASJC Scopus subject areas
- Physik der kondensierten Materie