An on-chip detector of transient stress events

A. Patnaik, M. Suchak, R. Seva, K. Pamidimukkala, D. Pommerenke, G. Edgington, R. Moseley, J. Feddeler, M. Stockinger, D. Beetner

Publikation: Beitrag in Buch/Bericht/KonferenzbandBeitrag in einem Konferenzband

Abstract

Testing and debugging of electrostatic discharge (ESD) or electrical fast transient (EFT) issues in modern electronic systems can be challenging. The following paper describes the design of an on-chip circuit which detects and stores the occurrence of a fast transient stress event at the ESD protection structures in an I/O pad. Measurements and simulations of a test circuit in 90 nm technology show it can accurately detect and record the presence of a transient stress event with a peak current as low as 0.9 A or duration as short as 1 ns and that the detector works well across typical temperature and process variations. The small size of the detector will allow it to be used effectively even in low-cost commercial ICs.

Originalspracheenglisch
Titel2017 IEEE International Symposium on Electromagnetic Compatibility, Signal and Power Integrity, EMCSI 2017 - Proceedings
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers
Seiten146-151
Seitenumfang6
ISBN (elektronisch)9781538622308
DOIs
PublikationsstatusVeröffentlicht - 20 Okt 2017
Extern publiziertJa
Veranstaltung2017 IEEE International Symposium on Electromagnetic Compatibility, Signal and Power Integrity, EMCSI 2017 - Washington, USA / Vereinigte Staaten
Dauer: 7 Aug 201711 Aug 2017

Publikationsreihe

NameIEEE International Symposium on Electromagnetic Compatibility
ISSN (Print)1077-4076
ISSN (elektronisch)2158-1118

Konferenz

Konferenz2017 IEEE International Symposium on Electromagnetic Compatibility, Signal and Power Integrity, EMCSI 2017
LandUSA / Vereinigte Staaten
OrtWashington
Zeitraum7/08/1711/08/17

ASJC Scopus subject areas

  • !!Condensed Matter Physics
  • !!Electrical and Electronic Engineering

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