A Broadband 2.1 GHz LDMOS Power Amplifier with 700 MHz Bandwidth Implementing Band-pass Filter-Based Matching Networks

Jose Romero Lopera; Michael Ernst Gadringer; Erich Leitgeb; Wolfgang Bösch

doi:10.1109/CoBCom49975.2020.9174184

A Broadband 2.1 GHz LDMOS Power Amplifier with 700 MHz Bandwidth Implementing Band-pass Filter-Based Matching Networks

Jose Romero Lopera, Michael Ernst Gadringer, Erich Leitgeb, Wolfgang Bösch

Institut für Hochfrequenztechnik (4510)

Publikation: Beitrag in Buch/Bericht/Konferenzband › Beitrag in einem Konferenzband › Begutachtung

Abstract

In this paper we are presenting a power amplifier based on an RF power LDMOS transistor at 2.1 GHz with a bandwidth of 700 MHz implementing broadband impedance matching networks (BIMN) in band-pass form. The device parasitics modelled as a series RLC structure are absorbed in the input and output matching networks by proper design of matching networks in band-pass form using two different synthesis methodologies. The S 21 of the amplifier shows 11.2 dB of maximum small signal gain with 2.4 dB ripple along a 700 MHz bandwidth at 2.1 GHz and S 11 better than −7dB for 1. 64-2.34GHz. The band-pass matching networks are entirely designed by transmission lines modeling the behavior of the resonant parallel shunt and series LC structures that characterize a band-pass circuit. The amplifier should be able to deliver 1W of maximum output power at saturation.

Originalsprache	englisch
Titel	CoBCom 2020 - International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications - Proceedings
Herausgeber (Verlag)	Institute of Electrical and Electronics Engineers
Seitenumfang	4
ISBN (elektronisch)	978-1-7281-7492-1
DOIs	https://doi.org/10.1109/CoBCom49975.2020.9174184
Publikationsstatus	Veröffentlicht - 9 Juli 2020
Veranstaltung	3rd International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications: CoBCom 2020 - TU Graz, Virtuell, Graz, Österreich Dauer: 7 Juli 2020 → 10 Juli 2020 https://www.cobcom.tugraz.at/

Konferenz

Konferenz	3rd International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications
Kurztitel	CoBCom 2020
Land/Gebiet	Österreich
Ort	Virtuell, Graz
Zeitraum	7/07/20 → 10/07/20
Internetadresse	https://www.cobcom.tugraz.at/

ASJC Scopus subject areas

Elektrotechnik und Elektronik
Instrumentierung
Hardware und Architektur
Computernetzwerke und -kommunikation
Medientechnik

Fields of Expertise

Information, Communication & Computing

Treatment code (Nähere Zuordnung)

Experimental

Zugriff auf Dokument

10.1109/CoBCom49975.2020.9174184Lizenz: Andere

Andere Dateien und Links

TRITON - Heterogene Integration von Millimeter-Wellen Technologie
Gadringer, M. E., Romero Lopera, J., Bösch, W., Pezzei, P., Leitgeb, E., Hatab, Z. & Bekhrad, P.
1/05/17 → 30/04/21
Projekt: Forschungsprojekt

Dieses zitieren

Romero Lopera, J., Gadringer, M. E., Leitgeb, E., & Bösch, W. (2020). A Broadband 2.1 GHz LDMOS Power Amplifier with 700 MHz Bandwidth Implementing Band-pass Filter-Based Matching Networks. in CoBCom 2020 - International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications - Proceedings Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/CoBCom49975.2020.9174184

A Broadband 2.1 GHz LDMOS Power Amplifier with 700 MHz Bandwidth Implementing Band-pass Filter-Based Matching Networks. / Romero Lopera, Jose; Gadringer, Michael Ernst ; Leitgeb, Erich et al.
CoBCom 2020 - International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications - Proceedings. Institute of Electrical and Electronics Engineers, 2020.

Publikation: Beitrag in Buch/Bericht/Konferenzband › Beitrag in einem Konferenzband › Begutachtung

Romero Lopera, J, Gadringer, ME , Leitgeb, E & Bösch, W 2020, A Broadband 2.1 GHz LDMOS Power Amplifier with 700 MHz Bandwidth Implementing Band-pass Filter-Based Matching Networks. in CoBCom 2020 - International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications - Proceedings. Institute of Electrical and Electronics Engineers, 3rd International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications, Virtuell, Graz, Österreich, 7/07/20. https://doi.org/10.1109/CoBCom49975.2020.9174184

Romero Lopera J, Gadringer ME , Leitgeb E , Bösch W. A Broadband 2.1 GHz LDMOS Power Amplifier with 700 MHz Bandwidth Implementing Band-pass Filter-Based Matching Networks. in CoBCom 2020 - International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications - Proceedings. Institute of Electrical and Electronics Engineers. 2020 doi: 10.1109/CoBCom49975.2020.9174184

Romero Lopera, Jose ; Gadringer, Michael Ernst ; Leitgeb, Erich et al. / A Broadband 2.1 GHz LDMOS Power Amplifier with 700 MHz Bandwidth Implementing Band-pass Filter-Based Matching Networks. CoBCom 2020 - International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications - Proceedings. Institute of Electrical and Electronics Engineers, 2020.

@inproceedings{de38618d5b5c4f488a65fd9ed0fd877e,

title = "A Broadband 2.1 GHz LDMOS Power Amplifier with 700 MHz Bandwidth Implementing Band-pass Filter-Based Matching Networks",

abstract = "In this paper we are presenting a power amplifier based on an RF power LDMOS transistor at 2.1 GHz with a bandwidth of 700 MHz implementing broadband impedance matching networks (BIMN) in band-pass form. The device parasitics modelled as a series RLC structure are absorbed in the input and output matching networks by proper design of matching networks in band-pass form using two different synthesis methodologies. The S 21 of the amplifier shows 11.2 dB of maximum small signal gain with 2.4 dB ripple along a 700 MHz bandwidth at 2.1 GHz and S 11 better than −7dB for 1. 64-2.34GHz. The band-pass matching networks are entirely designed by transmission lines modeling the behavior of the resonant parallel shunt and series LC structures that characterize a band-pass circuit. The amplifier should be able to deliver 1W of maximum output power at saturation.",

keywords = "Band-pass, Broadband impedance matching network, LDMOS, Power amplifier",

author = "{Romero Lopera}, Jose and Gadringer, {Michael Ernst} and Erich Leitgeb and Wolfgang B{\"o}sch",

year = "2020",

month = jul,

day = "9",

doi = "10.1109/CoBCom49975.2020.9174184",

language = "English",

booktitle = "CoBCom 2020 - International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "3rd International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications : CoBCom 2020, CoBCom 2020 ; Conference date: 07-07-2020 Through 10-07-2020",

url = "https://www.cobcom.tugraz.at/",

}

TY - GEN

T1 - A Broadband 2.1 GHz LDMOS Power Amplifier with 700 MHz Bandwidth Implementing Band-pass Filter-Based Matching Networks

AU - Romero Lopera, Jose

AU - Gadringer, Michael Ernst

AU - Leitgeb, Erich

AU - Bösch, Wolfgang

PY - 2020/7/9

Y1 - 2020/7/9

N2 - In this paper we are presenting a power amplifier based on an RF power LDMOS transistor at 2.1 GHz with a bandwidth of 700 MHz implementing broadband impedance matching networks (BIMN) in band-pass form. The device parasitics modelled as a series RLC structure are absorbed in the input and output matching networks by proper design of matching networks in band-pass form using two different synthesis methodologies. The S 21 of the amplifier shows 11.2 dB of maximum small signal gain with 2.4 dB ripple along a 700 MHz bandwidth at 2.1 GHz and S 11 better than −7dB for 1. 64-2.34GHz. The band-pass matching networks are entirely designed by transmission lines modeling the behavior of the resonant parallel shunt and series LC structures that characterize a band-pass circuit. The amplifier should be able to deliver 1W of maximum output power at saturation.

AB - In this paper we are presenting a power amplifier based on an RF power LDMOS transistor at 2.1 GHz with a bandwidth of 700 MHz implementing broadband impedance matching networks (BIMN) in band-pass form. The device parasitics modelled as a series RLC structure are absorbed in the input and output matching networks by proper design of matching networks in band-pass form using two different synthesis methodologies. The S 21 of the amplifier shows 11.2 dB of maximum small signal gain with 2.4 dB ripple along a 700 MHz bandwidth at 2.1 GHz and S 11 better than −7dB for 1. 64-2.34GHz. The band-pass matching networks are entirely designed by transmission lines modeling the behavior of the resonant parallel shunt and series LC structures that characterize a band-pass circuit. The amplifier should be able to deliver 1W of maximum output power at saturation.

KW - Band-pass

KW - Broadband impedance matching network

KW - LDMOS

KW - Power amplifier

UR - https://ieeexplore.ieee.org/search/searchresult.jsp?queryText=COBCOM&highlight=true&returnType=SEARCH&matchPubs=true&ranges=2020_2020_Year&returnFacets=ALL&refinements=Author:Erich%20Leitgeb

UR - http://www.scopus.com/inward/record.url?scp=85092292788&partnerID=8YFLogxK

U2 - 10.1109/CoBCom49975.2020.9174184

DO - 10.1109/CoBCom49975.2020.9174184

M3 - Conference paper

BT - CoBCom 2020 - International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications - Proceedings

PB - Institute of Electrical and Electronics Engineers

T2 - 3rd International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications

Y2 - 7 July 2020 through 10 July 2020

ER -

A Broadband 2.1 GHz LDMOS Power Amplifier with 700 MHz Bandwidth Implementing Band-pass Filter-Based Matching Networks

Abstract

Konferenz

ASJC Scopus subject areas

Fields of Expertise

Treatment code (Nähere Zuordnung)

Zugriff auf Dokument

Andere Dateien und Links

Fingerprint

Projekte

TRITON - Heterogene Integration von Millimeter-Wellen Technologie

Dieses zitieren