A Broadband 2.1 GHz LDMOS Power Amplifier with 700 MHz Bandwidth Implementing Band-pass Filter-Based Matching Networks

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Abstract

In this paper we are presenting a power amplifier based on an RF power LDMOS transistor at 2.1 GHz with a bandwidth of 700 MHz implementing broadband impedance matching networks (BIMN) in band-pass form. The device parasitics modelled as a series RLC structure are absorbed in the input and output matching networks by proper design of matching networks in band-pass form using two different synthesis methodologies. The S 21 of the amplifier shows 11.2 dB of maximum small signal gain with 2.4 dB ripple along a 700 MHz bandwidth at 2.1 GHz and S 11 better than −7dB for 1. 64-2.34GHz. The band-pass matching networks are entirely designed by transmission lines modeling the behavior of the resonant parallel shunt and series LC structures that characterize a band-pass circuit. The amplifier should be able to deliver 1W of maximum output power at saturation.
Originalspracheenglisch
TitelCoBCom 2020 - International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications - Proceedings
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers
Seitenumfang4
ISBN (elektronisch)978-1-7281-7492-1
DOIs
PublikationsstatusVeröffentlicht - 9 Jul 2020
VeranstaltungInternational Conference on Broadband Communications, Networks, and Systems: CoBCom 2020 - TU Graz, Virtuell, Österreich
Dauer: 7 Jul 202010 Jul 2020
https://www.cobcom.tugraz.at/

Konferenz

KonferenzInternational Conference on Broadband Communications, Networks, and Systems
KurztitelCoBCom 2020
LandÖsterreich
OrtVirtuell
Zeitraum7/07/2010/07/20
Internetadresse

ASJC Scopus subject areas

  • !!Electrical and Electronic Engineering
  • !!Instrumentation
  • !!Hardware and Architecture
  • !!Computer Networks and Communications
  • !!Media Technology

Fields of Expertise

  • Information, Communication & Computing

Treatment code (Nähere Zuordnung)

  • Experimental

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