The influence of progress variations is becoming extremely critical for nanoCMOS technology nodes, due to geometric tolerances and manufacturing non-idealities (such as edge or surface roghness, or the fluctuation of the number of doping atoms.) As a result, production yields and figures of merit of a circuit such as performance, power, and reliability have become extremely sensitive to uncontrollable statistical process variations. Although some kind of variability has always existed and been taken into account for designing integrated circuits, the largest impact of variability and the greater influence of random or spatial aspects are setting up a completely new challenge. On top of those difficulties, the deficiency of design techniques and EDA methodologies for tachling PVs makes that challenge even more critical. The objective of the MODERN project is to develop new paradigms in integrated circuit design which will enable the manufacturing of reliable, low cost, low EMI, high-yield complex products using unreliable and variable devices.
|Tatsächlicher Beginn/ -es Ende||1/01/09 → 31/12/11|
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