The CopPeR project will provide a novel copper deposition process based on the use of non-aqueous solvents to overcome the limitations of currently employed interconnect formation processes enabling device scaling beyond the 32nm technology node. This non-aqueous process will open novel routes to implement direct on barrier plating, focussing on tantalum and ruthenium as diffusion barriers. As another main advantage the process developed and implemented within the CopPeR project will significantly improve the quality of the Cu metallization due to the fact that more space is available in trenches for high quality, low resistivity Cu, due to the fact that the resistivity limiting seed-Cu will be eliminated and thinner barrier films can be applied, e.g. by ALD (atomic layer deposition). CopPeR will achieve the final goal through collaborations within a very strong consortium based on a team with outstanding scientific, engineering and manufacturing qualifications. In a first phase, electrolyte ingredients will be selected and experimentally verified, a deposition cell designed through modelling and simulation as well as new analytical techniques evaluated to enable adequate analysis of the deposited films. The second phase will focus on the development of the copper deposition process based on the findings from phase one with the additional support of micro-modelling and the process scaled and integrated into a 300mm proof-of-concept. In the third and final phase, the process will be integrated into a complete interconnect scheme, and optimised according to the industrial chip manufacturer's needs.